CPZ58X-1N4109

Bare die,12.990 X 12.990 mils,Diode-Zener,0.5W Zener Diode

Case Type: CHIP,WAFFLE

Forward Voltage (VF)
1.1 V
Junction Temperature (Tj)
-65 — 200 °C
Maximum Zener Current (IZM)
16.3 mA
Noise Density (ND)
40
Power Dissipation (PD)
250 mW
Reverse Voltage Leakage Current (IR)
0.05 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
100 Ω
Zener Voltage (VZ)
14.25 — 15.75 V

(15 V Typical)

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPZ58X-1N4109-CM WafflePack@400 Active Bare die,12.990 X 12.990 mils,Diode-Zener,0.5W Zener Diode EAR99 8541.10.0040 PBFREE
CPZ58X-1N4109-CT WafflePack@400 Active Bare die,12.990 X 12.990 mils,Diode-Zener,0.5W Zener Diode EAR99 8541.10.0040 PBFREE

Resources

Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CPZ28X-1N4099-4135_WPD.PDF Device Datasheet
Material Composition:SOD-123 Material Composition
Package Detail Document:SOD-123 Package Detail Document
Process Change Notice:Copper Wire Bonding Process Change Notice
Process Change Notice:CPZ19 REPLACED WITH CPZ28 Process Change Notice
Product Reliability Data:SOD-123 Package Reliability Product Reliability Data