CPZ58X-1N4620

3.3V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Zener Current (I_ZM)

80 mA

Noise Density (N_D)

Power Dissipation (P_D)

250 mW

Reverse Voltage Leakage Current (I_R)

7.5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

1650 Ω

Zener Voltage (V_Z)

3.135 — 3.465 V

(3.3 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-1N4620-CT	WafflePack@400		Active	3.3V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ28X-1N4614-4627_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice