CPZ58X-1N4680

2.2V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Change in Zener Voltage Over Current (ΔV_Z)

750 mV

Maximum Zener Current (I_ZM)

100 mA

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

4 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Voltage (V_Z)

2.09 — 2.31 V

(2.2 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-1N4680-CT	WafflePack@400		Active	2.2V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ28X-1N4678-4717_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice