CPZ58X-1N4684

Technical Specifications

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Change in Zener Voltage Over Current (ΔV_Z)

950 mV

Maximum Zener Current (I_ZM)

80 mA

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

7.5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Voltage (V_Z)

3.135 — 3.465 V

(3.3 V Typical)

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-1N4684-CM	WafflePack@400	Active	3.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE
CPZ58X-1N4684-CT	WafflePack@400	Active	3.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE
CPZ58X-1N4684-WN	Wafer	Active	3.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPZ28X-1N4678-4717_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.