CPZ58X-1N5229B

4.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.2 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Temperature Coefficient (ΘV_Z)

-0.055 — 0.055 %/°C

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

22 Ω

Zener Knee Impedance (Z_ZK)

2000 Ω

Zener Voltage (V_Z)

4.085 — 4.515 V

(4.3 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-1N5229B-CT	WafflePack@400		Active	4.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Copper Bond Wire	Analytical Test Report
Analytical Test Report:Gold Bond Wire	Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
CPZ28X-1N5221B_SERIES_WPD.PDF	Device Datasheet
Material Composition:SOT-23	Material Composition
Package Detail Document:SOT-23	Package Detail Document
Process Change Notice:All Switching, Schottky and	Process Change Notice
Process Change Notice:Copper Wire Bonding	Process Change Notice
Process Change Notice:CPZ18 REPLACED WITH CPZ28X	Process Change Notice
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice
Product Reliability Data:SOT-23 Package Reliability	Product Reliability Data
Step File 3D Object:SOT-23	Step File 3D Object