CPZ58X-1N5232B

5.6V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.2 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Temperature Coefficient (ΘV_Z)

0.038 %/°C

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

11 Ω

Zener Knee Impedance (Z_ZK)

1600 Ω

Zener Voltage (V_Z)

5.32 — 5.88 V

(5.6 V Typical)

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-1N5232B-CM	WafflePack@400	Active	5.6V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE
CPZ58X-1N5232B-CT	WafflePack@400	Active	5.6V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE
CPZ58X-1N5232B-WN	Wafer	Active	5.6V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
CPZ28X-1N5221B_SERIES_WPD.PDF	Device Datasheet
Material Composition:SOD-80	Material Composition
Package Detail Document:SOD-80	Package Detail Document
Product EOL Notice:CLL5221B-CLL5235B	Product EOL Notice
Product Reliability Data:SOD-80 Package Reliability	Product Reliability Data

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.