CPZ58X-1N5524B

5.6V,400mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.1 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Temperature Coefficient (ΘV_Z)

-0.03 — 0.045 %/°C

Power Dissipation (P_D)

400 mW

Reverse Voltage Leakage Current (I_R)

2 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

30 Ω

Zener Voltage (V_Z)

5.32 — 5.88 V

(5.6 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-1N5524B-CT	WafflePack@400		Active	5.6V,400mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ28X-1N5518B-5546B_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice