CPZ58X-BZX55C3V3

Bare die,12.990 X 12.990 mils,0.5W Zener Diode

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 150 °C

Maximum Zener Current (I_ZM)

85 mA

Noise Density (N_D)

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

0.8 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

312.5 °C/W

Thermal Resistance Junction-Lead (Θ_JL)

150 °C/W

Zener Impedance (Z_ZT)

1600 Ω

Zener Voltage (V_Z)

2.85 — 3.15 V

(3 V Typical)

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-BZX55C3V3-CM	WafflePack@400	Active	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE
CPZ58X-BZX55C3V3-CT	WafflePack@400	Active	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE
CPZ58X-BZX55C3V3-WN	Wafer	Active	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPZ28X-BZX55C3V3_SERIES_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice
Product EOL Notice:CPZ28X CHIP PROCESS	Product EOL Notice

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.