CPZ58X-BZX55C5V1

Bare die,12.990 X 12.990 mils,0.5W Zener Diode

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 150 °C

Maximum Zener Current (I_ZM)

85 mA

Noise Density (N_D)

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

0.8 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

312.5 °C/W

Thermal Resistance Junction-Lead (Θ_JL)

150 °C/W

Zener Impedance (Z_ZT)

1600 Ω

Zener Voltage (V_Z)

2.85 — 3.15 V

(3 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-BZX55C5V1-CM	WafflePack@400		Active	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE
CPZ58X-BZX55C5V1-CT	WafflePack@400		Active	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ58X-BZX55C3V3_SERIES_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document