CPZ58X-BZX55C6V8

Bare die,12.990 X 12.990 mils,0.5W Zener Diode

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 150 °C

Maximum Zener Current (I_ZM)

85 mA

Noise Density (N_D)

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

0.8 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

312.5 °C/W

Thermal Resistance Junction-Lead (Θ_JL)

150 °C/W

Zener Impedance (Z_ZT)

1600 Ω

Zener Voltage (V_Z)

2.85 — 3.15 V

(3 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-BZX55C6V8-CT	WafflePack@400		Active	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE
CPZ58X-BZX55C6V8-WN	Wafer		Active	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
CPZ28X-BZX55C3V3_SERIES_WPD.PDF	Device Datasheet
Material Composition:SOD-80	Material Composition
Package Detail Document:SOD-80	Package Detail Document
Product Reliability Data:SOD-80 Package Reliability	Product Reliability Data

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.