CPZ58X-BZX84C5V6

5.6V,350mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

900 mV

Junction Temperature (T_j)

-65 — 150 °C

Maximum Temperature Coefficient (ΘV_Z)

0.03 %/°C

Maximum Zener Current (I_ZM)

45 mA

Power Dissipation (P_D)

350 mW

Reverse Voltage Leakage Current (I_R)

1 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

357 °C/W

Zener Impedance (Z_ZT)

40 Ω

Zener Knee Impedance (Z_ZK)

400 Ω

Zener Voltage (V_Z)

5.2 — 6 V

(5.6 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-BZX84C5V6-CM	WafflePack@400		Active	5.6V,350mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Package Detail Document:WAFER	Package Detail Document