CPZ58X-CMPZ5230B

350mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

900 mV

Junction Temperature (T_j)

-65 — 150 °C

Maximum Temperature Coefficient (ΘV_Z)

-0.03 — 0.03 %/°C

Power Dissipation (P_D)

350 mW

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 150 °C

Zener Impedance (Z_ZT)

19 Ω

Zener Knee Impedance (Z_ZK)

1900 Ω

Zener Voltage (V_Z)

4.465 — 4.935 V

(4.7 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ58X-CMPZ5230B-CT	WafflePack@400		Active	350mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)	EAR99	8541.10.0040	PBFREE
CPZ58X-CMPZ5230B-WN	Wafer		Active	350mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPZ28X-CMPZ5221B_SER_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document

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AEM stands ready to assist with your latest design endeavors as your trusted partner.