CPZ59X-1N5259B

Bare die,12.990 X 12.990 mils,Diode-Zener,0.5W Zener Diode

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.2 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Temperature Coefficient (ΘV_Z)

0.094 %/°C

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

0.1 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

80 Ω

Zener Knee Impedance (Z_ZK)

800 Ω

Zener Voltage (V_Z)

37.05 — 40.95 V

(39 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ59X-1N5259B-CT	WafflePack@400		Active	Bare die,12.990 X 12.990 mils,Diode-Zener,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPZ28X-1N5221B_SERIES_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document