CP226V-2N4391

4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (Ciss)
14 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Continuous Gate Current (IG)
50 mA
Drain Current-Off (ID(OFF))
100 pA
Drain Current-Off (ID(OFF))
200 nA
Drain-Gate Voltage (VDG)
40 V
Drain-Source On Resistance (rds(ON))
30 Ω
Drain-Source On Voltage (VDS(ON))
400 mV
Fall Time (tf)
15 ns
Gate Leakage Current (IGSS)
100 pA
Gate Leakage Current (IGSS)
200 nA
Gate-Source Breakdown Voltage (BVGSS)
40 V
Gate-Source Cutoff Voltage (VGS(OFF))
4 — 10 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
40 V
Junction Temperature (Tj)
-65 — 175 °C
Power Dissipation (PD)
1.8 W
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
50 — 150 mA
Static Drain-Source On Resistance (rDS(ON))
30 Ω
Storage Temperature (Tstg)
-65 — 175 °C
Turn-off Delay Time (tOFF)
20 ns
Turn-on Delay Time (tON)
15 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP226V-2N4391-CM WafflePack@400 Active 4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFET EAR99 8541.29.0040 PBFREE
CP226V-2N4391-CT WafflePack@400 Active 4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFET EAR99 8541.29.0040 PBFREE
CP226V-2N4391-CT20 WafflePack@20 Active 4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFET EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP226V-2N4391_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document