CP264V-2N5457

.5V,6V,10mA,310mW Bare die,17.120 X 15.110 mils,JFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (C_iss)

7 pF

Common Source Reverse Transfer Capacitance (C_rss)

3 pF

Continuous Gate Current (I_G)

10 mA

Drain-Gate Voltage (V_DG)

25 V

Drain-Source Voltage (V_DS)

25 V

Forward Transadmittance (g_fs)

1000 — 5000 µS

Gate Leakage Current (I_GSS)

1 nA

Gate Leakage Current (I_GSS)

200 nA

Gate-Source Breakdown Voltage (BV_GSS)

25 V

Gate-Source Cutoff Voltage (V_GS(OFF))

0.5 — 6 V

Gate-Source Voltage (V_GS)

25 V

Junction Temperature (T_j)

-65 — 150 °C

Output Conductance (g_os)

50 µS

Power Dissipation (P_D)

310 mW

Saturation Drain Current (I_DSS)

1 — 5 mA

Storage Temperature (T_stg)

-65 — 150 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP264V-2N5457-CM	WafflePack@400		Active	.5V,6V,10mA,310mW Bare die,17.120 X 15.110 mils,JFET	EAR99	8541.21.0040	PBFREE
CP264V-2N5457-CT	WafflePack@400		Active	.5V,6V,10mA,310mW Bare die,17.120 X 15.110 mils,JFET	EAR99	8541.21.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CP264V-2N5457_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document