CP548-2N5116

1V,4V,50mA,500mW Bare die,21.000 X 21.000 mils,JFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (Ciss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Gate Current (IG)
50 mA
Drain Current-Off (ID(OFF))
500 pA
Drain Current-Off (ID(OFF))
1 µA
Drain-Source On Resistance (rds(ON))
150 Ω
Drain-Source On Voltage (VDS(ON))
0.6 V
Gate Leakage Current (IGSS)
500 pA
Gate Leakage Current (IGSS)
1 µA
Gate-Drain Voltage (VGD)
30 V
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
1 — 4 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
30 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
500 mW
Saturation Drain Current (IDSS)
5 — 25 mA
Static Drain-Source On Resistance (rDS(ON))
150 Ω
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
60 ns
Turn On Time (ton)
42 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP548-2N5116-CT WafflePack@400 Discontinued 1V,4V,50mA,500mW Bare die,21.000 X 21.000 mils,JFET EAR99 8541.21.0040 PBFREE
CP548-2N5116-WN Wafer Discontinued 1V,4V,50mA,500mW Bare die,21.000 X 21.000 mils,JFET EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP548-2N5116_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice
Product EOL Notice:CP548-2N5116 Product EOL Notice

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