CP664V-2N2608

1V,4V,50mA,300mW Bare die,18.980 X 18.980 mils,JFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (C_iss)

17 pF

Continuous Gate Current (I_G)

50 mA

Drain-Gate Voltage (V_DG)

30 V

Drain-Source Voltage (V_DS)

30 V

Forward Transadmittance (g_fs)

1000 µS

Gate Leakage Current (I_GSS)

10 nA

Gate-Source Breakdown Voltage (BV_GSS)

30 V

Gate-Source Cutoff Voltage (V_GS(OFF))

1 — 4 V

Gate-Source Voltage (V_GS)

30 V

Noise Figure (NF)

3 dB

Power Dissipation (P_D)

300 mW

Saturation Drain Current (I_DSS)

0.9 — 4.5 mA

Storage Temperature (T_stg)

-60 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP664V-2N2608-CM	WafflePack@400		Active	1V,4V,50mA,300mW Bare die,18.980 X 18.980 mils,JFET	EAR99	8541.21.0040	PBFREE
CP664V-2N2608-CT	WafflePack@400		Active	1V,4V,50mA,300mW Bare die,18.980 X 18.980 mils,JFET	EAR99	8541.21.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
CP664V-2N2608_WPD.pdf	Device Datasheet
Material Composition:TO-18	Material Composition
Package Detail Document:TO-18	Package Detail Document
Process Change Notice:P-CHANNEL JFETS	Process Change Notice
Product Reliability Data:TO-18 Package Reliability	Product Reliability Data