CP664V-2N5460

.75V,6V,10mA,310mW Bare die,18.980 X 18.980 mils,JFET

Case Type: CHIP,WAFFLE

Common Source Forward Transadmittance (y_fs)

1 — 4 mS

Common Source Input Capacitance (C_iss)

7 pF

Common Source Reverse Transfer Capacitance (C_rss)

2 pF

Continuous Gate Current (I_G)

10 mA

Drain-Gate Voltage (V_DG)

40 V

Equivalent Input Noise Voltage (e_N)

115 nV/√Hz

Gate Leakage Current (I_GSS)

5 nA

Gate Leakage Current (I_GSS)

1 µA

Gate Source Voltage (V_GS)

0.5 — 4 V

Gate-Source Breakdown Voltage (BV_GSS)

40 V

Gate-Source Cutoff Voltage (V_GS(OFF))

0.75 — 6 V

Junction Temperature (T_j)

-65 — 150 °C

Noise Figure (NF)

2.5 dB

Output Admitance (y_os)

75 µS

Power Dissipation (P_D)

310 mW

Reverse Gate-Source Voltage (V_GSR)

40 V

Saturation Drain Current (I_DSS)

1 — 5 mA

Storage Temperature (T_stg)

-65 — 150 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP664V-2N5460-CT	WafflePack@400		Active	.75V,6V,10mA,310mW Bare die,18.980 X 18.980 mils,JFET	EAR99	8541.21.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CP664V-2N5460_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document