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CP354X-2N7003T

Bare die,21.651 X 21.651 mils,N-Chan Enhancement Mode MOSFET

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
60 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current (ID)
280 mA
Diode Forward On Voltage (VSD)
1.4 V
Drain-Gate Voltage (VDG)
50 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source Voltage (VDS)
50 V
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
50 nA
Gate Leakage Current, Forward (IGSSF)
0.5 µA
Gate Leakage Current, Forward (IGSSF)
1 µA
Gate Leakage Current, Reverse (IGSSR)
50 nA
Gate Leakage Current, Reverse (IGSSR)
0.5 µA
Gate Leakage Current, Reverse (IGSSR)
1 µA
Gate Threshold Voltage (VGS(th))
0.7 — 1.2 V
Gate-Drain Charge (Qgd)
0.156 nC
Gate-Source Charge (Qgs)
0.148 nC
Gate-Source Voltage (VGS)
12 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
1.5 A
Power Dissipation (PD)
350 mW
Power Dissipation (PD)
300 mW
Power Dissipation (PD)
150 mW
Saturation Drain Current (IDSS)
50 nA
Static Drain-Source On Resistance (rDS(ON))
2.3 Ω

(1.6 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
1.9 Ω

(1.3 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
1.5 Ω

(1.1 Ω Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
0.764 nC

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP354X-2N7003T-WN Wafer Active Bare die,21.651 X 21.651 mils,N-Chan Enhancement Mode MOSFET EAR99 8541.21.0040 PBFREE

Resources

Item Type
Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CP354X.PDF Device Datasheet
Material Composition:SOT-563 Material Composition
Package Detail Document:SOT-563 Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-563 Process Change Notice
Process Change Notice:SMD MOSFET Halogen Free Mold Process Change Notice
Process Change Notice:SOT-563 Alternate Lead Frame Process Change Notice
Product Reliability Data:SOT-563 Package Reliability Product Reliability Data

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