CP361X-CEDM7001

100mA,20V Bare die,14.173 X 14.173 mils,MOSFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (Ciss)
9 pF
Common Source Output Capacitance (Coss)
9.5 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Continuous Drain Current (ID)
100 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
100 mS
Gate Leakage Current, Forward (IGSSF)
1 µA
Gate Leakage Current, Reverse (IGSSR)
1 µA
Gate Threshold Voltage (VGS(th))
600 — 900 mV
Gate-Drain Charge (Qgd)
0.08 nC
Gate-Source Charge (Qgs)
0.16 nC
Gate-Source Voltage (VGS)
10 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
200 mA
Power Dissipation (PD)
100 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
3 Ω

(0.9 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
4 Ω

(1.3 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
15 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Total Gate Charge (Qg)
0.566 nC
Turn Off Time (toff)
75 ns
Turn On Time (ton)
50 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP361X-CEDM7001-CT WafflePack@400 Active 100mA,20V Bare die,14.173 X 14.173 mils,MOSFET EAR99 8541.21.0040 PBFREE
CP361X-CEDM7001-WN Wafer Active 100mA,20V Bare die,14.173 X 14.173 mils,MOSFET EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Ni/Pd/Au plated leadframe Analytical Test Report
CP361X-CEDM7001_WPD.PDF Device Datasheet
Material Composition:SOT-883L Material Composition
Package Detail Document:SOT-883L Package Detail Document
Spice Model:Spice Model CEDM7001 Spice Model

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