CP375-CWDM3011N

11A,30V Bare die,62.000 X 38.000 mils,MOSFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (Ciss)
860 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
100 pF
Continuous Drain Current (ID)
11 A
Diode Forward On Voltage (VSD)
1.2 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage (VDS)
30 V
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3 V

(1.8 V Typical)

Gate-Drain Charge (Qgd)
2.3 nC
Gate-Source Charge (Qgs)
2 nC
Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
50 A
Power Dissipation (PD)
2.5 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
20 mΩ

(14 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
30 mΩ

(18 mΩ Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
50 °C/W
Total Gate Charge (Qg)
6.3 nC
Turn Off Time (toff)
43 ns
Turn On Time (ton)
20 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP375-CWDM3011N-CT WafflePack@340 Discontinued 11A,30V Bare die,62.000 X 38.000 mils,MOSFET EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Wire Analytical Test Report
CP375_WPD.PDF Device Datasheet
Material Composition:SOIC-8 Material Composition
Package Detail Document:SOIC-8 Package Detail Document
Process Change Notice:CP375->CP406 Process Change Notice
Process Change Notice:SOIC-8 CASE Process Change Notice
Product Reliability Data:SOIC-8 Package Reliability Product Reliability Data
Spice Model:Spice Model CWDM3011N Spice Model