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CP726X-CMLDM8120

860mA,20V Bare die,27.559 X 31.496 mils,MOSFET

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
200 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
80 pF
Continuous Drain Current (ID)
860 mA
Continuous Drain Current (ID)
950 mA
Continuous Source Current (Body Diode) (IS)
360 mA
Diode Forward On Voltage (VSD)
900 mV
Drain-Source Breakdown Voltage (BVDSS)
20 V

(24 V Typical)

Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
2 S
Gate Leakage Current, Forward (IGSSF)
50 nA

(1 nA Typical)

Gate Leakage Current, Reverse (IGSSR)
50 nA

(1 nA Typical)

Gate Threshold Voltage (VGS(th))
0.45 — 1 V

(0.76 V Typical)

Gate-Drain Charge (Qgd)
1.52 nC
Gate-Source Charge (Qgs)
0.36 nC
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
4 A
Maximum Pulsed Source Current (ISM)
4 A
Power Dissipation (PD)
350 mW
Power Dissipation (PD)
300 mW
Power Dissipation (PD)
150 mW
Saturation Drain Current (IDSS)
500 nA

(5 nA Typical)

Static Drain-Source On Resistance (rDS(ON))
150 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
142 mΩ

(85 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
200 mΩ

(130 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
240 mΩ

(190 mΩ Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
3.56 nC
Turn Off Time (toff)
25 ns
Turn On Time (ton)
20 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP726X-CMLDM8120-CT WafflePack@400 Active 860mA,20V Bare die,27.559 X 31.496 mils,MOSFET EAR99 8541.21.0040 PBFREE

Resources

Item Type
Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CP726X-CMLDM8120_WPD.PDF Device Datasheet
Material Composition:SOT-23 Material Composition
Package Detail Document:SOT-23 Package Detail Document
Process Change Notice:Copper Wire Bonding Process Change Notice
Product Reliability Data:SOT-23 Package Reliability Product Reliability Data
Spice Model:Spice Model CMPDM8120 Spice Model
Step File 3D Object:SOT-23 Step File 3D Object