CP773-CMPDM302PH

2.4A,30V Bare die,27.000 X 39.000 mils,MOSFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (Ciss)
800 pF
Common Source Output Capacitance (Coss)
62 pF
Common Source Reverse Transfer Capacitance (Crss)
69 pF
Continuous Drain Current (ID)
2.4 A
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage (VDS)
30 V
Forward Transconductance (gFS)
4.6 S
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.7 — 1.4 V
Gate-Drain Charge (Qgd)
2.6 nC

(1.5 nC Typical)

Gate-Source Charge (Qgs)
4.2 nC

(1.4 nC Typical)

Gate-Source Voltage (VGS)
12 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
9.6 A
Power Dissipation (PD)
350 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.091 Ω

(0.05 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
0.129 Ω

(0.066 Ω Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
9.6 nC

(7 nC Typical)

Turn Off Time (toff)
17 ns
Turn On Time (ton)
12 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP773-CMPDM302PH-CT WafflePack@400 Discontinued 2.4A,30V Bare die,27.000 X 39.000 mils,MOSFET EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
CP773-CMPDM302PH_WPD.PDF Device Datasheet
Material Composition:SOT-23F Material Composition
Package Detail Document:SOT-23F Package Detail Document
Product EOL Notice:CMPDM202PH Product EOL Notice
Spice Model:Spice Model CMPDM302PH Spice Model