CP794R-CEDM8004

450mA,30V Bare die,15.700 X 15.700 mils,MOSFET

Case Type: CHIP,WAFFLE

Common Source Input Capacitance (Ciss)
55 pF

(45 pF Typical)

Common Source Output Capacitance (Coss)
15 pF

(8.5 pF Typical)

Common Source Reverse Transfer Capacitance (Crss)
10 pF

(8.9 pF Typical)

Continuous Drain Current (ID)
450 mA
Continuous Source Current (Body Diode) (IS)
450 mA
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage (VDS)
30 V
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
3 µA
Gate Leakage Current, Reverse (IGSSR)
3 µA
Gate Threshold Voltage (VGS(th))
0.5 — 1 V
Gate-Drain Charge (Qgd)
0.128 nC
Gate-Source Charge (Qgs)
0.35 nC
Gate-Source Voltage (VGS)
8 V
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current (IDM)
1 A
On State Drain Current (ID(ON))
400 mA
Power Dissipation (PD)
100 mW
Saturation Drain Current (IDSS)
1 µA
Saturation Drain Current (IDSS)
500 µA
Static Drain-Source On Resistance (rDS(ON))
1.1 Ω

(1 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
2 Ω

(1.6 Ω Typical)

Static Drain-Source On Resistance (rDS(ON))
3.3 Ω

(2.6 Ω Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
1250 °C/W
Thermal Resistance Junction-Case (ΘJC)
800 °C/W
Total Gate Charge (Qg)
0.88 nC
Turn Off Time (toff)
250 ns
Turn On Time (ton)
200 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP794R-CEDM8004-CT WafflePack@400 Active 450mA,30V Bare die,15.700 X 15.700 mils,MOSFET EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP794R-CEDM8004_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document