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CP802-CWDM3011P

11A,30V Bare die,85.830 X 59.450 mils,MOSFET

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
3100 pF
Common Source Output Capacitance (Coss)
320 pF
Common Source Reverse Transfer Capacitance (Crss)
450 pF
Continuous Drain Current (ID)
11 A
Diode Forward On Voltage (VSD)
1.3 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage (VDS)
30 V
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3 V

(1.4 V Typical)

Gate-Drain Charge (Qgd)
10.1 nC
Gate-Source Charge (Qgs)
7 nC
Gate-Source Voltage (VGS)
20 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
50 A
Power Dissipation (PD)
2.5 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
20 mΩ

(12 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
30 mΩ

(15 mΩ Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
50 °C/W
Total Gate Charge (Qg)
80 nC
Turn Off Time (toff)
330 ns
Turn On Time (ton)
49 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP802-CWDM3011P-CM WafflePack@100 Special Order Item 11A,30V Bare die,85.830 X 59.450 mils,MOSFET EAR99 8541.29.0040 PBFREE
CP802-CWDM3011P-CT WafflePack@100 Special Order Item 11A,30V Bare die,85.830 X 59.450 mils,MOSFET EAR99 8541.29.0040 PBFREE

Resources

Item Type
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Wire Analytical Test Report
CP802-CWDM3011P_WPD.PDF Device Datasheet
Material Composition:SOIC-8 Material Composition
Package Detail Document:SOIC-8 Package Detail Document
Process Change Notice:CP775 -> CP802 Process Change Notice
Process Change Notice:SOIC-8 CASE Process Change Notice
Product Reliability Data:SOIC-8 Package Reliability Product Reliability Data
Spice Model:Spice Model CWDM3011P Spice Model