Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
VDS = 400 V
f = 100 kHz
Test Conditions
VDS = 400 V
f = 100 kHz
Test Conditions
VDS = 400 V
f = 100 kHz
Test Conditions
IS = 3.9 A
Test Conditions
ID = 250 µA
Test Conditions
VDS = 400 V
Test Conditions
VDS = 400 V
Test Conditions
VDS = 400 V
VGS = 6 V
ID = 8 A
L = 318 µH
RG = 10 Ω
Test Conditions
VGS = 6 V
Test Conditions
VGS = 1 V
Test Conditions
ID = 12.2 mA
VGS = 650 V
(1.7 V Typical)
Test Conditions
VGS = 6 V
ID = 3.9 A
VDS = 400 V
Test Conditions
VGS = 6 V
ID = 3.9 A
VDS = 400 V
Test Conditions
VDS = 400 V
VGS = 6 V
ID = 8 A
L = 318 µH
RG = 10 Ω
Test Conditions
VDS = 650 V
(0.45 µA Typical)
Test Conditions
VGS = 6 V
ID = 3.9 A
(138 mΩ Typical)
Test Conditions
VGS = 6 V
ID = 3.9 A
VDS = 400 V
Test Conditions
VDS = 400 V
VGS = 6 V
ID = 8 A
L = 318 µH
RG = 10 Ω
Test Conditions
RG = 10 Ω
VGS = 6 V
VDS = 400 V
L = 318 µH
ID = 8 A
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CPG003-CDFG6511N-WN | Wafer | Active | 11.5A,650V Bare die,132.000 X 55.000 mils,MOSFET | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:TVS Die | Analytical Test Report |
| Analytical Test Report:Wafer Rectifier | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| Analytical Test Report:Wafer/Die | Analytical Test Report |
| Package Detail Document:WAFER | Package Detail Document |
| Product Brief:PB GANFETS | Product Brief |
Product Support
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Design Support
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