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CPG004-CDFG6517N

17A,650V Bare die,165.000 X 65.000 mils,MOSFET

Case Type: CHIP,WAFFLE

Device Datasheet

Technical Specifications

Common Source Input Capacitance (C_iss)

125 pF

Common Source Output Capacitance (C_oss)

41 pF

Common Source Reverse Transfer Capacitance (C_rss)

0.4 pF

Continuous Drain Current (I_D)

17 A

Diode Forward On Voltage (V_SD)

2.4 V

Drain-Source Breakdown Voltage (BV_DSS)

650 V

Drain-Source Voltage (V_DS)

650 V

Effective Output Capacitance, Energy Related (C_oss(er))

59 pF

Effective Output Capacitance, Time Related (C_oss(tr))

82 pF

Fall Time (t_f)

4 ns

Gate Leakage Current, Forward (I_GSSF)

70 µA

Gate Leakage Current, Reverse (I_GSSR)

70 µA

Gate Threshold Voltage (V_GS(th))

1.2 — 2.5 V

(1.7 V Typical)

Gate-Drain Charge (Q_gd)

1.2 nC

Gate-Source Charge (Q_gs)

0.3 nC

Gate-Source Voltage (V_GS)

-1.4 — 7 V

Junction Temperature (T_j)

-55 — 150 °C

Maximum Pulsed Drain Current (I_DM)

32 A

Power Dissipation (P_D)

1.1 W

Power Dissipation (P_D)

113 W

Rise Time (t_r)

5 ns

Saturation Drain Current (I_DSS)

25 µA

(0.6 µA Typical)

Static Drain-Source On Resistance (r_DS(ON))

140 mΩ

(106 mΩ Typical)

Storage Temperature (T_stg)

-55 — 150 °C

Total Gate Charge (Q_g)

3.5 nC

Turn-off Delay Time (t_OFF)

4 ns

Turn-on Delay Time (t_ON)

3 ns

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPG004-CDFG6517N-CM	WafflePack@60		Please Call	17A,650V Bare die,165.000 X 65.000 mils,MOSFET	EAR99	8541.29.0040	PBFREE

Resources


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