CPZ33R-CMNTVS12V

18W,9V Bare die,14.200 X 14.200 mils,Transient Voltage Suppressor

Case Type: CHIP,WAFFLE

Breakdown Voltage (V_BR)

11.4 — 12.7 V

(12 V Typical)

Dynamic Resistance (R_DYN)

2.56 Ω

Electrical Fast Transient (EFT)

40 A

ESD Voltage (V_ESD)

8 kV

ESD Voltage (V_ESD)

8 kV

Junction Capacitance (C_J)

10 pF

Junction Capacitance (C_J)

6 pF

Junction Temperature (T_j)

-55 — 150 °C

Maximum Clamping Voltage (V_C)

18 V

Peak Pulse Power (P_PK)

18 W

Reverse Stand-Off Voltage (V_RWM)

9 V

Reverse Voltage Leakage Current (I_R)

0.5 µA

Storage Temperature (T_stg)

-55 — 150 °C

Typical Clamping Voltage (V_CL)

20 V

Typical Clamping Voltage (V_CL)

30 V

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ33R-CMNTVS12V-CT	WafflePack@400		Active	18W,9V Bare die,14.200 X 14.200 mils,Transient Voltage Suppressor	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPZ33R-CMNTVS12V_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document