CPZ33R-CMNTVS12V

18W,9V Bare die,14.200 X 14.200 mils,Transient Voltage Suppressor

Case Type: CHIP,WAFFLE

Breakdown Voltage (VBR)
11.4 — 12.7 V

(12 V Typical)

Dynamic Resistance (RDYN)
2.56 Ω
Electrical Fast Transient (EFT)
40 A
ESD Voltage (VESD)
8 kV
ESD Voltage (VESD)
8 kV
Junction Capacitance (CJ)
10 pF
Junction Capacitance (CJ)
6 pF
Junction Temperature (Tj)
-55 — 150 °C
Maximum Clamping Voltage (VC)
18 V
Peak Pulse Power (PPK)
18 W
Reverse Stand-Off Voltage (VRWM)
9 V
Reverse Voltage Leakage Current (IR)
0.5 µA
Storage Temperature (Tstg)
-55 — 150 °C
Typical Clamping Voltage (VCL)
20 V
Typical Clamping Voltage (VCL)
30 V

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPZ33R-CMNTVS12V-CT WafflePack@400 Active 18W,9V Bare die,14.200 X 14.200 mils,Transient Voltage Suppressor EAR99 8541.10.0040 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Gold Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
CPZ33R-CMNTVS12V_WPD.PDF Device Datasheet
Material Composition:SOT-953 Material Composition
Package Detail Document:SOT-953 Package Detail Document
Product EOL Notice:Devices in the SOT-953 Case Product EOL Notice
Product Reliability Data:SOT-963 Package Reliability Product Reliability Data