CPZ39R-TVS5V0

Bare die,11.000 X 11.000 mils,Quad Array TVS

Case Type: CHIP,WAFFLE

Breakdown Voltage (V_BR)

6 — 8 V

(7.1 V Typical)

Dynamic Resistance (R_DYN)

1.45 Ω

Electrical Fast Transient (EFT)

40 A

ESD Voltage (V_ESD)

15 kV

ESD Voltage (V_ESD)

15 kV

Forward Voltage (V_F)

1.2 V

Junction Capacitance (C_J)

10 pF

(9.5 pF Typical)

Junction Capacitance (C_J)

5.5 pF

Junction Temperature (T_j)

-55 — 150 °C

Maximum Clamping Voltage (V_C)

12.5 V

Peak Pulse Power (P_PK)

25 W

Reverse Stand-Off Voltage (V_RWM)

5 V

Reverse Voltage Leakage Current (I_R)

250 nA

(5 nA Typical)

Storage Temperature (T_stg)

-55 — 150 °C

Typical Clamping Voltage (V_CL)

12 V

Typical Clamping Voltage (V_CL)

20 V

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ39R-TVS5V0-CT200	WafflePack@200		Special Order Item	Bare die,11.000 X 11.000 mils,Quad Array TVS	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ39R-CMNTVS5V0_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document