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CPZ40R-CMO5V0LC

12W,5V Bare die,13.400 X 13.400 mils,Transient Voltage Suppressor

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Breakdown Voltage (VBR)
6 V
Dynamic Resistance (RDYN)
0.96 Ω
Electrical Fast Transient (EFT)
40 A
ESD Voltage (VESD)
15 kV
ESD Voltage (VESD)
10 kV
Forward Voltage (VF)
1 V
Junction Capacitance (CJ)
0.9 pF
Junction Temperature (Tj)
-55 — 125 °C
Maximum Clamping Voltage (VC)
12 V
Peak Pulse Power (PPK)
12 W
Reverse Stand-Off Voltage (VRWM)
5 V
Reverse Voltage Leakage Current (IR)
1 µA
Storage Temperature (Tstg)
-55 — 150 °C
Typical Clamping Voltage (VCL)
5 V
Typical Clamping Voltage (VCL)
10 V

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPZ40R-CMO5V0LC-WN Wafer Active 12W,5V Bare die,13.400 X 13.400 mils,Transient Voltage Suppressor EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPZ40R-CMO5V0LC_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document

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