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CPZ52R-TVS5V0ULC

Bare die,14.200 X 11.000 mils,Ultra Low Capacitance TVS

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Breakdown Voltage (VBR)
6 — 10 V
Dynamic Resistance (RDYN)
2.94 Ω
Electrical Fast Transient (EFT)
40 A
ESD Voltage (VESD)
20 kV
ESD Voltage (VESD)
20 kV
Junction Capacitance (CJ)
0.35 pF

(0.2 pF Typical)

Junction Temperature (Tj)
-55 — 125 °C
Maximum Clamping Voltage (VC)
14 V
Maximum Clamping Voltage (VC)
15 V
Maximum Clamping Voltage (VC)
20 V
Peak Pulse Power (PPK)
14 W
Reverse Stand-Off Voltage (VRWM)
5 V
Reverse Voltage Leakage Current (IR)
500 nA
Storage Temperature (Tstg)
-55 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPZ52R-TVS5V0ULC-WN Wafer Active Bare die,14.200 X 11.000 mils,Ultra Low Capacitance TVS EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPZ52R-CFTVS5V0BULC_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document

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