CP622-2N6027

40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT

Case Type: CHIP,WAFFLE

Anode-Cathode Voltage (VAK)
40 V
DC Forward Anode Current (IT)
150 mA
DC Gate Current (IG)
50 mA
Forward Voltage (VF)
1.5 V
Gate-Anode Laekage Current (IGAO)
10 nA
Gate-Anode Reverse Voltage (VGAR)
40 V
Gate-Cathode Forward Voltage (VGKF)
40 V
Gate-Cathode Leakage Current (IGKS)
50 nA
Gate-Cathode Reverse Voltage (VGKR)
5 V
Junction Temperature (Tj)
-50 — 100 °C
Offset Voltage (VT)
0.2 — 1.6 V
Offset Voltage (VT)
0.2 — 0.6 V
Peak Current (IP)
2 µA
Peak Current (IP)
5 µA
Peak One Cycle Surge Current (ITSM)
5 A
Peak Repetitive Forward Current (ITRM)
2 A
Peak Repetitive Forward Current (ITRM)
1 A
Power Dissipation (PD)
300 mW
Pulse Output Voltage (VO)
6 V
Pulse Voltage Rate of Rise (tr)
80 ns
Storage Temperature (Tstg)
-55 — 150 °C
Valley Current (IV)
50 µA
Valley Current (IV)
70 µA
Valley Current (IV)
1.5 mA

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP622-2N6027-CT WafflePack@400 Active 40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT EAR99 8541.21.0040 PBFREE
CP622-2N6027-CT20 WafflePack@20 Active 40V,150mA Bare die,27.560 X 27.560 mils,Programmable UJT EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4 Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CP622-2N6027_WPD.PDF Device Datasheet
Material Composition:SOT-23 Material Composition
Package Detail Document:SOT-23 Package Detail Document
Process Change Notice:Copper Wire Bonding Process Change Notice
Product Reliability Data:SOT-23 Package Reliability Product Reliability Data
Step File 3D Object:SOT-23 Step File 3D Object