CPS041-2N5060

.8A,30V Bare die,41.340 X 41.340 mils,SCR

Case Type: CHIP,WAFFLE

Average Gate Power (PG(AV))
100 mW
Forward Voltage (VTM)
1.7 V
Gate Trigger Current (IGT)
200 µA
Gate Trigger Current (IGT)
350 µA
Gate Trigger Voltage (VGT)
0.8 V
Gate Trigger Voltage (VGT)
1.2 V
Gate Trigger Voltage (VGT)
0.1 V
Holding Current (IH)
5 mA
Holding Current (IH)
10 mA
Junction Temperature (Tj)
-40 — 125 °C
Peak Forward Gate Current (IFGM)
1 A
Peak Gate Power (PGM)
2 W
Peak Gate Voltage (VGM)
5 V
Peak Off-State Blocking Current (IDRM)
1 µA
Peak Off-State Blocking Current (IDRM)
50 µA
Peak One Cycle Surge Current (ITSM)
10 A
Peak Repetitive Off-State Voltage (VDRM)
30 V
Peak Repetitive Reverse Voltage (VRRM)
30 V
Rate of Rise of Reverse Voltage (dv/dt)
30 V/µs
RMS On-State Current (IT(RMS))
0.8 A
Storage Temperature (Tstg)
-40 — 150 °C
ueak Reverse Blocking Current (IRRM)
1 µA
ueak Reverse Blocking Current (IRRM)
50 µA

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPS041-2N5060-CT WafflePack@400 Discontinued .8A,30V Bare die,41.340 X 41.340 mils,SCR EAR99 8541.30.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CPS041.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Product EOL Notice:CPS041 CHIP PROCESS Product EOL Notice

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