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CPS053-2N2326

1.6A,200V Bare die,53.150 X 53.150 mils,SCR

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Average Gate Power (PG(AV))
10 mW
Average On-State Current (IT(AV))
1 A
Forward Voltage (VTM)
1.5 V
Gate Trigger Current (IGT)
200 µA
Gate Trigger Voltage (VGT)
0.8 V
Holding Current (IH)
2 mA
Junction Temperature (Tj)
-65 — 125 °C
Peak Forward Gate Current (IFGM)
0.1 A
Peak Gate Power (PGM)
0.1 W
Peak Gate Voltage (VGM)
6 V
Peak Non-Repetitive Rerverse Voltage (VRSM)
300 V
Peak Off-State Blocking Current (IDRM)
5 µA
Peak One Cycle Surge Current (ITSM)
15 A
Peak Repetitive Off-State Voltage (VDRM)
200 V
Peak Repetitive Reverse Voltage (VRRM)
200 V
RMS On-State Current (IT(RMS))
1.6 A
Storage Temperature (Tstg)
-65 — 150 °C
ueak Reverse Blocking Current (IRRM)
5 µA

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPS053-2N2326-CM WafflePack@400 Active 1.6A,200V Bare die,53.150 X 53.150 mils,SCR EAR99 8541.30.0040 PBFREE
CPS053-2N2326-CT WafflePack@400 Active 1.6A,200V Bare die,53.150 X 53.150 mils,SCR EAR99 8541.30.0040 PBFREE
CPS053-2N2326-WN Wafer Active 1.6A,200V Bare die,53.150 X 53.150 mils,SCR EAR99 8541.30.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPS053-2N2326_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document

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