CPS053-2N2326

1.6A,200V Bare die,53.150 X 53.150 mils,SCR

Case Type: CHIP,WAFFLE

Average Gate Power (P_G(AV))

10 mW

Average On-State Current (I_T(AV))

1 A

Forward Voltage (V_TM)

1.5 V

Gate Trigger Current (I_GT)

200 µA

Gate Trigger Voltage (V_GT)

0.8 V

Holding Current (I_H)

2 mA

Junction Temperature (T_j)

-65 — 125 °C

Peak Forward Gate Current (I_FGM)

0.1 A

Peak Gate Power (P_GM)

0.1 W

Peak Gate Voltage (V_GM)

6 V

Peak Non-Repetitive Rerverse Voltage (V_RSM)

300 V

Peak Off-State Blocking Current (I_DRM)

5 µA

Peak One Cycle Surge Current (I_TSM)

15 A

Peak Repetitive Off-State Voltage (V_DRM)

200 V

Peak Repetitive Reverse Voltage (V_RRM)

200 V

RMS On-State Current (I_T(RMS))

1.6 A

Storage Temperature (T_stg)

-65 — 150 °C

ueak Reverse Blocking Current (I_RRM)

5 µA

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPS053-2N2326-CM	WafflePack@400		Active	1.6A,200V Bare die,53.150 X 53.150 mils,SCR	EAR99	8541.30.0040	PBFREE
CPS053-2N2326-CT	WafflePack@400		Active	1.6A,200V Bare die,53.150 X 53.150 mils,SCR	EAR99	8541.30.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPS053-2N2326_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document