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CP127-TIP142

10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Device Datasheet

Technical Specifications

Base-Emitter On Voltage (V_BE(ON))

3 V

Collector-Base Cutoff Current (I_CBO)

1 mA

Collector-Base Voltage (V_CBO)

100 V

Collector-Emitter Breakdown Voltage (BV_CEO)

100 V

Collector-Emitter Cutoff Current (I_CEO)

2 mA

Collector-Emitter Saturation Voltage (V_CE(SAT))

2 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

3 V

Collector-Emitter Voltage (V_CEO)

100 V

Continuous Base Current (I_B)

500 mA

Continuous Collector Current (I_C)

10 A

DC Current Gain (h_FE)

1000

DC Current Gain (h_FE)

500

Emitter-Base Cutoff Current (I_EBO)

2 mA

Emitter-Base Voltage (V_EBO)

5 V

Forward Voltage (V_F)

2.8 V

Junction Temperature (T_j)

-65 — 150 °C

Peak Collector Current (I_CM)

20 A

Power Dissipation (P_D)

125 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Case (Θ_JC)

1 °C/W

Turn Off Time (t_off)

4 µs

Turn On Time (t_on)

0.9 µs

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP127-TIP142-CM	WafflePack@100		Active	10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)	EAR99	8541.29.0040	PBFREE
CP127-TIP142-CT	WafflePack@100		Active	10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)	EAR99	8541.29.0040	PBFREE

Resources


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CP127-TIP142_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document