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CP127-TIP142

10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter On Voltage (VBE(ON))
3 V
Collector-Base Cutoff Current (ICBO)
1 mA
Collector-Base Voltage (VCBO)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
2 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Saturation Voltage (VCE(SAT))
3 V
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current (IB)
500 mA
Continuous Collector Current (IC)
10 A
DC Current Gain (hFE)
1000
DC Current Gain (hFE)
500
Emitter-Base Cutoff Current (IEBO)
2 mA
Emitter-Base Voltage (VEBO)
5 V
Forward Voltage (VF)
2.8 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
20 A
Power Dissipation (PD)
125 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
1 °C/W
Turn Off Time (toff)
4 µs
Turn On Time (ton)
0.9 µs

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP127-TIP142-CM WafflePack@100 Active 10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE
CP127-TIP142-CT WafflePack@100 Active 10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE
CP127-TIP142-WN Wafer Active 10A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE

Resources

Item Type
CP127-TIP142_WPD.PDF Device Datasheet
Product EOL Notice:TO-218 CASE Product EOL Notice

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