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CP327V-D40C7

500mA,50V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Collector-Base Cutoff Current (ICBO)
20 µA
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Cutoff Current (ICES)
500 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCES)
50 V
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
80 MHz
DC Current Gain (hFE)
10 — 70 x103
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
13 V
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current (ICM)
1 A
Power Dissipation (PD)
6.25 W
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
20 °C/W
Turn Off Time (toff)
1200 ns
Turn On Time (ton)
120 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP327V-D40C7-WN Wafer Active 500mA,50V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CP327V-D40C7_WPD.pdf Device Datasheet
Package Detail Document:WAFER Package Detail Document

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