CP527-2N6042
8A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)
Case Type: CHIP,WAFFLE
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 4 A
VCE = 4 V
Test Conditions
IC = 8 A
IB = 80 mA
Test Conditions
VCB = 100 V
Test Conditions
IC = 100 mA
Test Conditions
VCE = 100 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 100 V
VBE(OFF) = 1.5 V
TC = 150 °C
Test Conditions
VCE = 100 V
Test Conditions
IC = 3 A
IB = 12 mA
Test Conditions
IC = 8 A
IB = 80 mA
Test Conditions
VCE = 4 V
IC = 3 A
f = 1 MHz
Test Conditions
VCE = 4 V
IC = 3 A
Test Conditions
VCE = 4 V
IC = 8 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 100 kHz
Test Conditions
VCE = 4 V
IC = 3 A
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP527-2N6042-CM | WafflePack@100 | Active | 8A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE | |
| CP527-2N6042-CT | WafflePack@100 | Active | 8A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE | |
| CP527-2N6042-WN | Wafer | Active | 8A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| CP527-2N6042_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CP517 replaced by CP527 | Process Change Notice |
| Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS | Product EOL Notice |
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