CP527-2N6296
4A,60V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)
Case Type: CHIP,WAFFLE
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 2 A
VCE = 3 V
Test Conditions
IC = 4 A
IB = 40 mA
Test Conditions
IC = 50 mA
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
TC = 150 °C
Test Conditions
VCE = 30 V
Test Conditions
IC = 2 A
IB = 8 mA
Test Conditions
IC = 4 A
IB = 40 mA
Test Conditions
VCE = 3 V
IC = 1.5 A
f = 1 MHz
Test Conditions
VCE = 3 V
IC = 2 A
Test Conditions
VCE = 3 V
IC = 4 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 100 kHz
Test Conditions
VCE = 3 V
IC = 1.5 A
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP527-2N6296-CT | WafflePack@100 | Active | 4A,60V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Leads | Analytical Test Report |
| CP527-2N6296_WPD.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Process Change Notice:CP517 replaced by CP527 | Process Change Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |
Product Support
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Design Support
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- PbSn plating options
- Package details
- Application notes
- Application and design sample kits
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