CP527-2N6668

10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
3.5 V
Base-Emitter On Voltage (VBE(ON))
4.5 V
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCER)
80 V
Collector-Emitter Breakdown Voltage (BVCEV)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEV)
300 µA
Collector-Emitter Cutoff Current (ICEV)
3 mA
Collector-Emitter Cutoff Current (ICEO)
1 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Saturation Voltage (VCE(SAT))
3 V
Collector-Emitter Voltage (VCER)
80 V
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (VCEV)
80 V
Continuous Base Current (IB)
250 mA
Continuous Collector Current (IC)
10 A
Current Gain-Bandwidth Product (fT)
20 MHz
DC Current Gain (hFE)
1 — 20 x103
DC Current Gain (hFE)
100
Emitter-Base Cutoff Current (IEBO)
10 mA
Emitter-Base Voltage (VEBO)
5 V
Forward Voltage (VF)
4 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
15 A
Power Dissipation (PD)
65 W
Power Dissipation (PD)
2 W
Second Breakdown Collector Current (Is/b)
3.2 A
Second Breakdown Energy (ES/b)
30 mJ
Small Signal Current Gain (hfe)
1000
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
62.5 °C/W
Thermal Resistance Junction-Case (ΘJC)
1.92 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP527-2N6668-CM WafflePack@100 Active 10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE
CP527-2N6668-CT WafflePack@100 Active 10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE
CP527-2N6668-WN Wafer Active 10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE
CP527-2N6668-WR Wafer Active 10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP527-2N6668_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:CP517 replaced by CP527 Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice

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