CP647-MJ11015
30A,120V Bare die,211.000 X 211.000 mils,Transistor-Bipolar Power (>1A)
Case Type: CHIP,WAFFLE
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 20 A
IB = 200 mA
Test Conditions
IC = 30 A
IB = 300 mA
Test Conditions
IC = 100 mA
Test Conditions
VCE = 120 V
RBE = 1 kΩ
Test Conditions
VCE = 120 V
RBE = 1 kΩ
TC = 150 °C
Test Conditions
VCE = 50 V
Test Conditions
IC = 20 A
IB = 200 mA
Test Conditions
IC = 30 A
IB = 300 mA
Test Conditions
VCE = 3 V
IC = 10 A
f = 1 MHz
Test Conditions
VCE = 5 V
IC = 20 A
Test Conditions
VCE = 5 V
IC = 30 A
Test Conditions
VEB = 5 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP647-MJ11015-CT | WafflePack@36 | Discontinued | 30A,120V Bare die,211.000 X 211.000 mils,Transistor-Bipolar Power (>1A) | EAR99 | 8541.29.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| Analytical Test Report:Wafer/Die | Analytical Test Report |
| CP647-MJ11015_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Product EOL Notice:CP647 WAFER PROCESS | Product EOL Notice |