CP707-MPSU95

Bare die,27.170 X 27.170 mils,Small Signal Darlington

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
2 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
125 MHz
DC Current Gain (hFE)
5 x103
DC Current Gain (hFE)
10 x103
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
10 V
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
2.5 pF
Power Dissipation (PD)
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP707-MPSU95-CT WafflePack@400 Discontinued Bare die,27.170 X 27.170 mils,Small Signal Darlington EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP707.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:CP707 replaced by CP727V Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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  • Application and design sample kits
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