CP727V-MPSA64

500mA,30V Bare die,22.800 X 22.800 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
2 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
125 MHz
DC Current Gain (hFE)
10 x103
DC Current Gain (hFE)
20 x103
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
10 V
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
2.5 pF
Power Dissipation (PD)
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP727V-MPSA64-CM WafflePack@400 Active 500mA,30V Bare die,22.800 X 22.800 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead Frame Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
CP727V-MPSA64_WPD.PDF Device Datasheet
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Process Change Notice:CP707 replaced by CP727V Process Change Notice
Product Reliability Data:TO-92 Package Reliability Product Reliability Data