CP727V-MPSU95

Bare die,22.800 X 22.800 mils,Small Signal Darlington

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (V_BE(ON))

2 V

Collector-Base Cutoff Current (I_CBO)

100 nA

Collector-Base Voltage (V_CBO)

30 V

Collector-Emitter Breakdown Voltage (BV_CES)

30 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

1.5 V

Collector-Emitter Voltage (V_CES)

30 V

Continuous Collector Current (I_C)

500 mA

Current Gain-Bandwidth Product (f_T)

100 MHz

DC Current Gain (h_FE)

50 x10³

DC Current Gain (h_FE)

20 x10³

Emitter-Base Cutoff Current (I_EBO)

100 nA

Emitter-Base Voltage (V_EBO)

8 V

Junction Temperature (T_j)

-65 — 150 °C

Noise Figure (NF)

2 dB

Output Capacitance (C_ob)

2.5 pF

Power Dissipation (P_D)

625 mW

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

200 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP727V-MPSU95-CT	WafflePack@400		Active	Bare die,22.800 X 22.800 mils,Small Signal Darlington	EAR99	8541.21.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CP727V-MPSU95_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document