CP191V-2N2219A

40V,800mA,800mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage (VCBO)
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
10 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
800 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
50
DC Current Gain (hFE)
75
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
50
DC Current Gain (hFE)
40
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation (PD)
800 mW
Power Dissipation (PD)
3 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
285 ns
Turn On Time (ton)
35 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP191V-2N2219A-CT WafflePack@400 Active 40V,800mA,800mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
CP191V.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N2219A Spice Model