CP191V-2N2222A

40V,800mA,500mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Time Constant (rb'Cc)
150 ps
Collector-Base Voltage (VCBO)
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
10 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
800 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
50
DC Current Gain (hFE)
75
DC Current Gain (hFE)
35
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
50
DC Current Gain (hFE)
40
Delay Time (td)
10 ns
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
6 V
Fall Time (tf)
60 ns
Input Capacitance (Cib)
25 pF
Input Impedance Common Emitter (hie)
2 — 8 kΩ
Input Impedance Common Emitter (hie)
0.25 — 1.25 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Output Admittance Common Emitter (hoe)
5 — 35 µS
Output Admittance Common Emitter (hoe)
25 — 200 µS
Output Capacitance (Cob)
8 pF
Power Dissipation (PD)
500 mW
Power Dissipation (PD)
1.8 W
Rise Time (tr)
25 ns
Small Signal Current Gain (hfe)
50 — 300
Small Signal Current Gain (hfe)
75 — 375
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient (ΘJA)
350 °C/W
Thermal Resistance Junction-Case (ΘJC)
97 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.8 x10-3
Voltage Feedback Ratio Common Emitter (hre)
0.4 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP191V-2N2222A-CM WafflePack@400 Active 40V,800mA,500mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP191V-2N2222A-CT WafflePack@400 Active 40V,800mA,500mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP191V-2N2222A-CT20 WafflePack@20 Special Order Item 40V,800mA,500mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP191V-2N2222A-WN Wafer Active 40V,800mA,500mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP191V-2N2222A-WR Wafer Active 40V,800mA,500mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE
CP191V-H2N2222A-CM WafflePack@400 Active 40V,800mA,500mW Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4 Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CP191V-2N2222A_WPD.PDF Device Datasheet
Material Composition:SOT-363 Material Composition
Package Detail Document:SOT-363 Package Detail Document
Product Reliability Data:SOT-363 Package Reliability Product Reliability Data
Spice Model:Spice Model CMKT2222A Spice Model
Step File 3D Object:SOT-363 (SC-88) Step File 3D Object

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