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CP191V-2N4401

40V,600mA,625mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
750 — 950 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
100 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
600 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
80
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
40
DC Current Gain (hFE)
20
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6.5 pF
Power Dissipation (PD)
625 mW
Small Signal Current Gain (hfe)
40 — 500
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
255 ns
Turn On Time (ton)
35 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP191V-2N4401-CT WafflePack@400 Active 40V,600mA,625mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP191V.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:CP191V / CP591X Wafers Process Change Notice
Spice Model:Spice Model CP191V Spice Model