CP229-2N5109

20V,400mA,1W Bare die,21.651 X 21.651 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Amplifier Power Gain (Gpe)
11 dB
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCER)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Cutoff Current (ICEV)
5 mA
Collector-Emitter Cutoff Current (ICEV)
5 mA
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
20 V
Continuous Base Current (IB)
400 mA
Continuous Collector Current (IC)
400 mA
Current Gain-Bandwidth Product (fT)
1200 MHz
DC Current Gain (hFE)
40 — 210
DC Current Gain (hFE)
5
Emitter-Base Cutoff Current (IEBO)
100 µA
Emitter-Base Voltage (VEBO)
3 V
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
3.5 pF
Power Dissipation (PD)
1 W
Power Dissipation (PD)
2.5 W
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP229-2N5109-CM WafflePack@400 Discontinued 20V,400mA,1W Bare die,21.651 X 21.651 mils,Transistor-Small Signal (<=1A) EAR99 8541.29.0040 PBFREE
CP229-2N5109-CT WafflePack@400 Discontinued 20V,400mA,1W Bare die,21.651 X 21.651 mils,Transistor-Small Signal (<=1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
CP229-2N5109_WPD.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Process Change Notice:CP214 Replaced by CP229 Process Change Notice
Product EOL Notice:RF TRANSISTOR DIE Product EOL Notice
Product Reliability Data:TO-39 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N5109 Spice Model