CP235-2N3055

60V,15A,115W Bare die,105.900 X 105.900 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
1.5 V
Collector-Base Voltage (VCBO)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Breakdown Voltage (BVCER)
70 V
Collector-Emitter Cutoff Current (ICEV)
1 mA
Collector-Emitter Cutoff Current (ICEV)
5 mA
Collector-Emitter Cutoff Current (ICEO)
700 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1.1 V
Collector-Emitter Saturation Voltage (VCE(SAT))
3 V
Collector-Emitter Voltage (VCER)
70 V
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current (IB)
7 A
Continuous Collector Current (IC)
15 A
Current Gain-Bandwidth Product (fT)
2.5 MHz
DC Current Gain (hFE)
20 — 70
DC Current Gain (hFE)
5
Emitter-Base Cutoff Current (IEBO)
5 mA
Emitter-Base Voltage (VEBO)
7 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
115 W
Second Breakdown Collector Current (Is/b)
2.87 A
Small Signal Current Gain (hfe)
15 — 120
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
1.52 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP235-2N3055-CT WafflePack@100 Discontinued 60V,15A,115W Bare die,105.900 X 105.900 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP235-2N3055_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Product EOL Notice:CPP55-BC177 Product EOL Notice