CP304X-MPSA06

80V,500mA,625mW Bare die,22.050 X 22.050 mils,Transistor-Small Signal (<=1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
1.2 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
100 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
100
DC Current Gain (hFE)
100
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage (VEBO)
4 V
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
625 mW
Power Dissipation (PD)
1.5 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
200 °C/W
Thermal Resistance Junction-Case (ΘJC)
83.3 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP304X-MPSA06-CT WafflePack@400 Active 80V,500mA,625mW Bare die,22.050 X 22.050 mils,Transistor-Small Signal (<=1A) EAR99 8541.21.0040 PBFREE

Resources

Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CP304X-MPSA06_WPD.PDF Device Datasheet
Material Composition:SOT-23 Material Composition
Package Detail Document:SOT-23 Package Detail Document
Process Change Notice:All Small Signal Transistor Process Change Notice
Process Change Notice:Copper Wire Bonding Process Change Notice
Product Reliability Data:SOT-23 Package Reliability Product Reliability Data
Spice Model:Spice Model CMPTA06 Spice Model
Step File 3D Object:SOT-23 Step File 3D Object