CP305V-2N2897
45V,1A,500mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)
Case Type: WAFER
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 150 mA
IB = 15 mA
Test Conditions
IC = 100 µA
Test Conditions
VCB = 60 V
Test Conditions
VCB = 60 V
TA = 150 °C
Test Conditions
IC = 100 mA
RBE = 10 Ω
Test Conditions
IC = 100 mA
Test Conditions
IC = 150 mA
IB = 15 mA
Test Conditions
VCE = 10 V
IC = 50 mA
f = 20 MHz
Test Conditions
VCE = 10 V
IC = 1 mA
Test Conditions
VCE = 10 V
IC = 150 mA
Test Conditions
IE = 100 µA
Test Conditions
VEB = 5 V
Test Conditions
VEB = 0.5 V
f = 100 kHz
Test Conditions
VCB = 10 V
f = 100 kHz
Test Conditions
VCE = 5 V
IC = 5 mA
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| CP305V-2N2897-WN | Wafer | Active | 45V,1A,500mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A) | EAR99 | 8541.21.0040 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:TVS Die | Analytical Test Report |
| Analytical Test Report:Wafer Rectifier | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| Analytical Test Report:Wafer/Die | Analytical Test Report |
| CP305V-2N2897_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
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